Leading-edge Semiconductor Technology Center

Leading-edge Semoconductor Technology Center

Formation	December 21, 2022; 2 years ago (2022-12-21)
Headquarters	Chiyoda, Tokyo
Chairman	Tetsuro Higashi
Academic leader	Makoto Gonokami
Website	https://www.lstc.jp/index.html

The Leading-edge Semiconductor Technology Center is a semiconductor research institution based in Japan. It is funded by the Ministry of Economy, Trade and Industry and was established in December 2022.[1]

The organisation's primary goal as of 2024 is to establish a domestic semiconductor industry ecosystem by developing design, device, manufacturing, and equipment/material technologies for product realisation in collaboration with domestic and international institutions, using the 2 nm process node manufacturing technology and pilot line under development with short TAT (turnaround time).[2] In February 2024, it was announced that the organisation would receive an additional 45 billion yen research grant from the Ministry of Economy, Trade, and Industry.[3]

Member organisations

Source:[4]

• Rapidus
• University of Tokyo
• Tokyo Institute of Technology
• Tohoku University
• National Institute for Materials Science
• RIKEN
• National Institute of Advanced Industrial Science and Technology
• University of Tsukuba
• High Energy Accelerator Research Organization
• Nagoya University
• Osaka University
• Hokkaido University
• Hiroshima University
• Kyushu University

References

1. "始動し始めた半導体産業復活への道 ～次世代半導体の開発戦略 – 経済産業新報社" (in Japanese). Retrieved 2024-06-05.
2. "技術研究組合最先端半導体技術センター". www.lstc.jp. Retrieved 2024-06-05.
3. "経産省、2nm以降の先端半導体開発に450億円 Rapidus後押し". EE Times Japan (in Japanese). Retrieved 2024-06-05.
4. "技術研究組合最先端半導体技術センター". www.lstc.jp. Retrieved 2024-06-05.

External links

• LSTC(in Japanese)